Issues critical to the abatement of plasma etch processes include: loss of production time due to clogging of Metal Etch exhaust lines; corrosion of ducting by aggressive etch – especially bromine – chemistries; the global warming potential of PFC gases; emissions of toxic etch by-products to air and water (e.g. arsenic from GaAs etching).
|Plasma Etch Process||Typical Gases Used|
|Metal Etch||Cl2, BCl3, HCl, CF4, SF6|
|Polysilicon Etch||Cl2, HBr, SF6, CF4, NF3, C4F8|
|Dielectric Etch||CF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3|
|III-V (GaAs) Etch||Cl2, BCl3, HBr, SF6, CH4|