COMPOUND SEMICONDUCTORS (MOCVD)
MOCVD, or more correctly, Metalorganic Vapor Phase Epitaxy (MOVPE or OMVPE), is a technique used to grow monocrystalline (epitaxial) compounds from Group III and V elements of the periodic table. Compounds such as GaAs, InP, AlGaAs, InAlGaAs and GaN are used to manufacture a diverse range of products, including optoelectronic devices, HEMT transistors, concentrator photovoltaic cells and LEDs, to name a few.
Given the relatively high usage of toxic hydride gases such as arsine, phosphine and hydrazine, MOCVD ranks among the most safety-critical of applications in terms of exhaust gas management. Safety of personnel and elimination of toxic emissions to the air and waterways are of primary concern.
| MOCVD Process | Typical Gases Used |
|---|---|
| Transistors | AsH3, PH3, NH3, TBAs, TBP, UDMH, TMAl, TMGa, TMIn, H2 |
| Optoelectronics | |
| III-V Photovoltaics | |
| LED Lighting | |
| III-V-on-Si |
