| Plasma Etch |
| Metal Etch |
Cl2, BCl3, HCl, CF4, SF6 |
| Poly Silicon Etch |
Cl2, HBr, Br2, SF6, CF4, NF3, C4F8 |
| Nitride Etch, Oxide Etch |
CF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3, |
|
SF6, O2 |
| Tungsten Etchback |
SF6 |
| Ion Implantation |
| High, Medium, Low |
AsH3, PH3, BF3, P, As, Sb, Sb(CH3)3, GeH4, GeF4 |
| ALD, LPCVD, PECVD, HDP-CVD |
| TEOS, undoped |
TEOS, O2, O3 |
| BPSG |
TEOS, O3, TMP, TMB, SiH4, PH3, B2H6 |
| Poly-Si (doped) |
SiH4, (AsH3, PH3) |
| Silicon Germanium |
SiH4, GeH4 |
| Oxide |
SiH4, O2 |
| Nitride, doped |
SiH4, NH3, (TMP, TMB, SiH4, PH3, B2H6) |
| Oxynitride, doped |
SiH4, NH3, N2O, (TMP, TMB, SiH4, PH3, B2H6) |
| Low-k dielectrics |
1MS, 2MS, 3MS, 4MS, DMDMOS |
| High-k dielectrics |
TMA, TEMAH, TDEAH, TAETO, PET |
| Gate Electrodes |
MPA, Ru(Etcp)2, PEMAT |
| Copper CVD |
Cu(hfac)(TMVS) |
| Tungsten (Silicide) |
WF6, SiH4, H2, (DCS) |
| Barrier Layers |
TiCl4, NH3, TDMAT, PDMATa, PDEATa, |
|
TAETO, W(CO)6 |
| Plasma Chamber Cleaning |
| PFC plasma |
C2F6, C4F8, NF3 |
| Remote NF3 plasma |
F2 |
| Epitaxy |
| Silicon (doped) |
DCS, TCS, SiH4, (AsH3, PH3, B2H6) |
| Silicon-Germanium |
SiH4, GeH4, CBr4, 1MS, 2MS, 3MS, HCl |
| Silicon-Carbide (SiC) |
SiH4, CH4, C3H8, TMA, HCl |
| Compound Semiconductors, Optoelectronics, III-V on Si |
| GaAs, InP MOVPE (MOCVD) |
TMGa, AsH3, TBA, TMIn, PH3, TBP |
| GaN MOVPE (MOCVD) |
TMGa, NH3, UDMH |
| MBE (MOMBE) |
As, P, AsH3, PH3 |
| III-V Etch |
Cl2, BCl3, HBr, SiF4, SF6, CH4, GaCl3, InCl3, AsH3, O2 |
| Photovoltaics |
| Concentrator Photovoltaics |
PH3, AsH3, metalorganics, SiH4, GeH4 |
| CIGS |
H2S, H2Se |
| Gas Supply |
| Emergency Gas Release Absorbers |
Toxics, Pyrophorics, Corrosives |
| Gas Cabinet Purging |
