Atomic Layer Deposition (ALD)
Deposition of latest generation transistor gates and other critical structures require metal complexes and other large molecules which are only available as liquid organometallic sources. CLEANSORB dry bed chemisorber technology offers a safe, efficient solution for a wide range of gaseous and liquid ALD precursors.
|ALD Process||Typical Gases Used|
|Gate Electrodes||MPA, Ru(Cp)2, PEMAT|
|Low-k Dielectrics||1MS, 2MS, 3MS, DMDMOS|
|High-k Dielectrics||TMA, TEMAH, TDEAH, TAETO, PET|
|Barrier Layers||TiCl4, NH3, TDMAT, PDMATa, PDEATa, TAETO, W(CO)6|