| Plasmaätzen |
| Metall Ätzen |
Cl2, BCl3, HCl, CF4, SF6 |
| Polysilizium Ätzen |
Cl2, HBr, Br2, SF6, CF4, NF3, C4F8 |
| Nitrid Ätzen, Oxid Ätzen |
CF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3, |
|
SF6, O2 |
| Wolfram Ätzen |
SF6 |
| Ionenimplantation |
| Hoch-, Mittel-, Schwachstrom |
AsH3, PH3, BF3, P, As, Sb, Sb(CH3)3, GeH4, GeF4 |
| ALD, LPCVD, PECVD, HDP-CVD |
| TEOS, undotiert |
TEOS, O2, O3 |
| BPSG |
TEOS, O3, TMP, TMB, SiH4, PH3, B2H6 |
| Poly-Si (dotiert) |
SiH4, (AsH3, PH3) |
| Silizium-Germanium |
SiH4, GeH4 |
| Oxid |
SiH4, O2 |
| Nitrid, dotiert |
SiH4, NH3, (TMP, TMB, SiH4, PH3, B2H6) |
| Oxinitrid, dotiert |
SiH4, NH3, N2O, (TMP, TMB, SiH4, PH3, B2H6) |
| Low-k Dielectrika |
1MS, 2MS, 3MS, 4MS, DMDMOS |
| High-k Dielectrika |
TMA, TEMAH, TDEAH, TAETO, PET |
| Gate-Elektroden |
MPA, Ru(Etcp)2, PEMAT |
| Kupfer-CVD |
Cu(hfac)(TMVS) |
| Wolfram (-silizid) |
WF6, SiH4, H2, (DCS) |
| Sperrschichten |
TiCl4, NH3, TDMAT, PDMATa, PDEATa, |
|
TAETO, W(CO)6 |
| Kammerreinigung |
| PFC Plasma |
C2F6, C4F8, NF3 |
| NF3 Remote Plasma |
F2 |
| Epitaxie |
| Silizium (dotiert) |
DCS, TCS, SiH4, (AsH3, PH3, B2H6) |
| Silizium-Germanium |
SiH4, GeH4, CBr4, 1MS, 2MS, 3MS, HCl |
| Silizium-Carbid (SiC) |
SiH4, CH4, C3H8, TMA, HCl |
| Verbindungshalbleiter, Optoelektronik, III-V auf Si |
| GaAs, InP MOVPE (MOCVD) |
TMGa, AsH3, TBA, TMIn, PH3, TBP |
| GaN MOVPE (MOCVD) |
TMGa, NH3, UDMH |
| MBE (MOMBE) |
As, P, AsH3, PH3 |
| III-V Ätzen |
Cl2, BCl3, HBr, SiF4, SF6, CH4, GaCl3, InCl3, AsH3, O2 |
| Photovoltaik |
| Konzentrator-Photovoltaik |
PH3, AsH3, Metallorganika, SiH4, GeH4 |
| CIGS |
H2S, H2Se |
| Gasversorgung |
| Notfallabsorber |
Toxisch, selbstentzündlich, korrosiv |
| Spülgasentsorgung |
